System for non radial temperature control for rotating substrates

ABSTRACT

Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 14/247,816, filed Apr. 8, 2014, which is acontinuation of U.S. application Ser. No. 13/548,858, filed Jul. 13,2012, now U.S. Pat. No. 8,724,977, issued on May 13, 2014, which is adivisional application of U.S. patent application Ser. No. 12/434,239,filed May 1, 2009, now U.S. Pat. No. 8,249,436 B2, issued on Aug. 21,2012, which claims priority to U.S. Provisional Patent Application Ser.No. 61/050,167, filed May 2, 2008, and U.S. Provisional PatentApplication Ser. No. 61/055,814, filed May 23, 2008. Each of theaforementioned patent applications is herein incorporated by reference.

BACKGROUND OF THE INVENTION Field of the Invention

Embodiments of the present invention generally relate to apparatus andmethod for processing semiconductor substrates. Particularly,embodiments of the present invention relate to processing a substrate ina rapid thermal processing chamber.

Description of the Related Art

Rapid thermal processing (RTP) is a process for annealing substratesduring semiconductor processing. During RTP, a substrate is generallysupported by a supporting device near the edge region and rotated as thesubstrate is heated by one or more heat sources. During RTP, thermalradiation is generally used to rapidly heat a substrate in a controlledenvironment to a maximum temperature of up to about 1350° C. Thismaximum temperature is maintained for a specific amount of time rangingfrom less than one second to several minutes depending on the process.The substrate is then cooled to room temperature for further processing.High intensity tungsten halogen lamps are commonly used as the source ofheat radiation. The substrate may be provided additional heat by aheated susceptor conductively coupled to the substrate.

The semiconductor fabrication process has several applications of RTP.Such applications include thermal oxidation, high temperature soakanneal, low temperature soak anneal, and spike anneal. In thermaloxidation, a substrate is heated in oxygen, ozone, or a combination ofoxygen and hydrogen which causes silicon substrate to oxidize to formsilicon oxide. In high temperature soak anneal, a substrate is exposedto different gas mixtures such as nitrogen, ammonia, or oxygen. Lowtemperature soak anneal is generally used to anneal substrate depositedwith metal. Spike anneal is used when the substrate needs to be exposedto high temperature for a very short time. During a spike anneal, thesubstrate is rapidly heated to a maximum temperature sufficient toactivate dopant and cooled rapidly to end the activation process priorto substantial diffusion of the dopant.

RTP usually requires a substantially uniform temperature profile acrossthe substrate. In the state of the art process, the temperatureuniformity may be improved by controlling heat sources, such as a laser,an array of lamps, configured to heat the substrate on the front sidewhile a reflective surface on the back side reflects heat back to thesubstrate. Emissivity measurement and compensation methodology have beenused to improve the temperature gradient across the substrate.

As the semiconductor industry develops, the requirement for temperatureuniformity during a RTP also increases. In some processes, it isimportant to have substantially small temperature gradient from about 2mm inside the edge of the substrate. Particularly, it may be necessaryto heat a substrate at a temperature between about 200° C. to about1350° C. with a temperature deviation of about 1° C. to 1.5° C. Thestate of the art RTP systems incorporate radially controllable zones toimprove uniformity along a radius of the substrate being processed.However, non-uniformities are caused by variety of reasons and appear invariety of patterns. The non-uniformity is more likely a non-radialnon-uniformity, in which temperatures on different locations have thesame radius varies. A non-radial non-uniformity cannot be resolved byadjusting heating sources according to their radial locations.

FIGS. 1A-1D schematically illustrates exemplary non-radialnon-uniformities. In a RTP system, an edge ring is usually used tosupport a substrate near the periphery. The edge ring and the substrateoverlap producing a complicated heating situation near the edge of thesubstrate. In one aspect, the substrate may have different thermalproperties near the edge. This is mostly pronounced for a patternedsubstrate, or for a silicon-on isulator—(SOI) substrate. In anotheraspect, the substrate and the edge ring overlap near the edge, it isdifficult to achieve uniform temperature profile near the edge bymeasuring and adjusting the temperature of the substrate alone.Depending on the edge ring's thermal properties relative to thesubstrate's thermal and optical properties, the temperature profile of asubstrate is generally either edge high or edge low.

FIG. 1A schematically illustrates two types of common temperatureprofiles of a substrate processed in a RTP chamber. The vertical axisdenotes measured temperatures on a substrate. The horizontal axisdenotes the distance from the edge of the substrate. Profile 1 is anedge high profile where the edge of the substrate has the highesttemperature measurement. Profile 1 is an edge low profile where the edgeof the substrate has the lowest temperature measurement. It is difficultto remove temperature deviation near the edge of the substrate in thestate of the art RTP systems.

FIG. 1A is a schematic top view of a substrate 102 disposed onsupporting ring 101. The supporting ring 101 rotates about a center,which generally coincides with a center of the whole system. It isdesired that a center of the substrate 102 is aligned with the center ofthe supporting ring 101. However, the substrate 102 is likely tomisaligned with the supporting ring 101 during to different reasons. Asthe requirements for thermal processing increase, a small misalignmentbetween the substrate 102 and the supporting ring 101 may causenon-uniformity as shown in FIG. 1B. During a spike process, amisplacement of 1 mm may cause temperature variation of about 30° C. Thestate of the art thermal processing systems have a substrate placementaccuracy of about 0.18 mm, thus have a temperature variation of about 5°C. due to alignment limitation.

FIG. 1B is a schematic temperature map of the substrate 102 duringthermal processing where the substrate 102 is misaligned with thesupporting ring 101. The substrate 102 generally has both a hightemperature zone 103 and a low temperature zone 104 along an edge region105.

FIG. 1C is a schematic temperature map of a substrate 107 during rapidthermal processing. The substrate 107 has a temperature gradient along ahorizontal direction 106. The temperature gradient of FIG. 1C may becaused by various reasons, such as ion implantation, chamber asymmetry,intrinsic substrate properties, and process kit variability.

FIG. 1D is a schematic temperature map of a patterned substrate 108which has surface structures 109 formed from materials different thanthe substrate 108. Line 111 is a temperature profile across a diameterof the substrate 108. The temperature varies because the properties ofthe surface structures 109 are different from the substrate 108. Sincemost substrates in thermal processing have structures formed thereon,temperature variation caused by local pattern is a common phenomena.

Therefore, there is a need for apparatus and methods used in RTP forreducing non-radial temperature non-uniformity.

SUMMARY OF THE INVENTION

Embodiments of the present invention provide apparatus and method forreducing non-uniformity during thermal processing. Particularly,embodiments of the present invention provide apparatus and method forreducing non-radial non uniformity during thermal processing.

One embodiment of the present invention provides an apparatus forprocessing a substrate comprising a chamber body defining a processingvolume, a substrate support disposed in the processing volume, whereinthe substrate support is configured to rotate the substrate, a sensorassembly configured to measure temperature of the substrate at aplurality of locations, and one or more pulse heating elementsconfigured to provide pulsed energy towards the processing volume.

Another embodiment of the present invention provides a method forprocessing a substrate comprising placing a substrate on a substratesupport disposed in a processing volume of a processing chamber,rotating the substrate and heating the substrate by directing radiantenergy towards the processing volume, wherein at least a portion of theradiant energy is pulsed energy having a frequency determined by arotational speed of the substrate.

Yet another embodiment of the present invention provides a thermalprocessing chamber comprising a chamber body having a processing volumedefined by chamber walls, a quartz window, and a reflector plate,wherein the quartz window and the reflector plate are disposed onopposite side of the processing volume, a substrate support disposed inthe processing volume, wherein the substrate support is configured tosupport and rotate a substrate, a heating source disposed outside thequartz window and configured to direct energy towards the processingvolume through the quartz window, wherein the heating source comprises aplurality of heating elements, and at least a portion of the heatingelements are pulse heating elements configured to provide pulsed energytowards the processing volume, a sensor assembly disposed through thereflector plate and configured to measure temperature along differentradius locations in the processing volume, and a system controllerconfigured to adjust one of frequency, phase, and amplitude of thepulsed energy from the heating source.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1A is a schematic top view of a substrate disposed on a supportingring during thermal processing.

FIG. 1B is a schematic temperature map of a substrate during thermalprocessing, the temperature map showing non-radial non-uniformity causedby misalignment.

FIG. 1C is a schematic temperature map of a substrate during thermalprocessing, the temperature map showing a temperature gradient acrossthe substrate.

FIG. 1D is a schematic sectional side view of a patterned substrate anda temperature profile across a diameter showing variation caused bypattern.

FIG. 2 is a schematic sectional side view of a thermal processingchamber in accordance with one embodiment of the present invention.

FIG. 3 is a schematic top view of a substrate illustrating a method toobtain a temperature map in accordance with one embodiment of thepresent invention.

FIG. 4 is a schematic drawing showing a heating source having pulsedzones and pulsed heating components in accordance with one embodiment ofthe present invention.

FIG. 5 is a schematic flow chart illustrating a method for processing asubstrate in accordance with one embodiment of the present invention.

FIG. 6A is a schematic plot showing an effect of a pulsed laser heatingsource at one phase.

FIG. 6B is a schematic plot showing an effect of a pulsed laser heatingsource at one phase.

FIG. 6C is a schematic plot showing an effect of a pulsed laser heatingsource at one phase.

FIG. 6D is a schematic plot showing an effect of a pulsed laser heatingsource at one phase.

FIGS. 6E-6F schematically illustrate uniformity improvement by adjustingphase and amplitude of a laser heating source.

FIG. 7A is a schematic top view of a lamp assembly having three pulsedzones.

FIG. 7B schematically illustrates effects of a pulsed lamp zone nearcorresponding to a middle region of a substrate.

FIG. 7C schematically illustrates effects of a pulsed lamp zone nearcorresponding to edge region of a substrate.

FIG. 7D schematically illustrates effects of a pulsed lamp zone nearcorresponding to a region outwards an edge of the substrate.

FIG. 7E is a schematic plot showing a thermal process that adjusts phaseand amplitude of lamps in a pulsed zone corresponding to a regionoutwards an edge of a substrate.

FIG. 8 is a schematic sectional side view of a thermal processingchamber in accordance with one embodiment of the present invention.

FIG. 9 is a schematic sectional side view of a thermal processingchamber in accordance with one embodiment of the present invention.

FIG. 10A is a schematic top view of a test substrate having a checkerboard pattern.

FIG. 10B is a schematic plot showing a thermal process performed to thetest substrate of FIG. 10A.

FIG. 10C is a schematic plot showing a temperature profile across adiameter of the test substrate during thermal processing by heating thepatterned side of the substrate.

FIG. 10D is a schematic plot showing a temperature profile across adiameter of the test substrate during thermal processing by heating thenon-patterned side of the substrate.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

Embodiments of the present invention provide apparatus and method forreducing non-uniformity during thermal processing. Particularly,embodiments of the present invention provide apparatus and method forreducing non-radial non uniformity during thermal processing.

One embodiment of the present invention provides a thermal processingchamber having one or more pulse heating elements. One embodiment of thepresent invention provides a method for reducing non-uniformity byadjusting, at least one of frequency, phase and amplitude of a powersource for the one or more pulse heating elements. In one embodiment,adjusting the phase and/or amplitude of the power source is performed ata frequency determined by a rotation frequency of the substrate. In oneembodiment, the power source has the same frequency as the rotation ofthe substrate. In one embodiment, the phase of the power source isdetermined by a temperature map obtained from a plurality of sensors.

In one embodiment, the thermal processing chamber comprises a pluralityof heating elements that are grouped in one or more azimuthallycontrolled zones. In one embodiment, each of azimuthally controlledzones comprises one or more heating elements that may be controlled byadjusting phase and/or amplitude of a power source.

In another embodiment, the thermal processing chamber comprises one ormore auxiliary heating elements in addition to a main heating source. Inone embodiment, the one or more auxiliary heating elements may becontrolled by adjusting phase and/or amplitude of its power source.

Another embodiment of the present invention provides a thermalprocessing chamber comprising a heating source configured to heat a backside of a substrate being processed. Heating the substrate from the backside during thermal processing reduces non-uniformity caused by patternof the substrate.

FIG. 2 schematically illustrates a sectional view of a rapid thermalprocessing system 10 in accordance with one embodiment of the presentinvention. The rapid thermal processing system 10 comprises a chamberbody 35 defining a processing volume 14 configured for annealing adisk-shaped substrate 12 therein. The chamber body 35 may be made ofstainless steel and may be lined with quartz. The processing volume 14is configured to be radiantly heated by a heating lamp assembly 16disposed on a quartz window 18 of the rapid thermal processing system10. In one embodiment, the quartz window 18 may be water cooled.

A slit valve 30 may be formed on a side of the chamber body 35 providinga passage for the substrate 12 to the processing volume 14. A gas inlet44 may be connected to a gas source 45 to provide processing gases,purge gases and/or cleaning gases to the processing volume 14. A vacuumpump 13 may be fluidly connected to the processing volume 14 through anoutlet 11 for pumping out the processing volume 14.

A circular channel 27 is formed near the bottom of the chamber body 35.A magnetic rotor 21 is disposed in the circular channel 27. A tubularriser 39 rests on or otherwise coupled to the magnetic rotor 21. Thesubstrate 12 is supported by a peripheral edge by an edge ring 20disposed on the tubular riser 39. A magnetic stator 23 is locatedexternally of the magnetic rotor 21 and is magnetically coupled throughthe chamber body 35 to induce rotation of the magnetic rotor 21 andhence of the edge ring 20 and the substrate 12 supported thereon. Themagnetic stator 23 may be also configured to adjust the elevations ofthe magnetic rotor 21, thus lifting the substrate 12 being processed.

The chamber body 35 may include a reflector plate 22 near the back sideof the substrate 12. The reflector plate 22 has an optical reflectivesurface 28 facing the back side of the substrate 12 to enhance theemissivity of the substrate 12. In one embodiment, the reflector plate22 may be water cooled. The reflective surface 28 and the back side ofthe substrate 12 define a reflective cavity 15. In one embodiment, thereflector plate 22 has a diameter slightly larger than the diameter ofthe substrate 12 being processed. For example, if the rapid thermalprocessing system 10 is configured to process 12 inch substrates, thediameter of the reflector plate 22 may be about 13 inches.

A purge gas may be provided to the reflector plate 22 through a purgegas inlet 48 connected to a purge gas source 46. The purge gas ejectedto the reflector plate 22 helps cooling of the reflector plate 22especially near the apertures 25 where heat is not reflected back to thesubstrate 12.

In one embodiment, an outer ring 19 may be coupled between the chamberbody 35 and the edge ring 20 to separate the reflective cavity 15 fromthe processing volume 14. The reflective cavity 15 and the processingvolume 14 may have different environments.

The heating lamp assembly 16 may comprise an array of heating elements37. The array of heating elements 37 may be UV lamps, halogen lamps,laser diodes, resistive heaters, microwave powered heaters, lightemitting diodes (LEDs), or any other suitable heating elements bothsingly or in combination. The array of heating elements 37 may bedisposed in vertical holes formed in a reflector body 43. In oneembodiment, the heating elements 37 may be arranged in a hexagonpattern. A cooling channel 40 may be formed in the reflector body 43. Acoolant, such as water, may enter the reflector body 43 from an inlet41, travel adjacent the vertical holes cooling the array of heatingelements 37, and exit the reflector body 43 from an exit 42.

The array of heating elements 37 are connected to a controller 52 whichare capable of adjusting heating effects of the array of heatingelements 37. In one embodiment, the array of heating elements 37 may bedivided into a plurality of heating groups to heat the substrate 12 bymultiple concentric zones. Each heating group may be controlledindependently to provide desired temperature profile across a radius ofthe substrate 12.

In one embodiment, the heating lamp assembly 16 comprises one or morezoned groups 57 and one or more of pulse groups 53. Each of the zonegroups 57 is connected to a power source 55 and may be individuallycontrolled. In one embodiment, the amplitude of power provided to eachzone groups 57 may be independently controlled to adjust radiant energydirecting to a corresponding zone. Each of the pulse groups 53 compriseone or more heating elements 37 and connected to a power source 54 whichmay be controlled by phase and/or amplitude. The phase of the powersource 54 may be adjusted to control radiant energy directed towards asection of a radial zone.

FIG. 4 is a schematic drawing showing one embodiment of grouping theheating lamp assembly 16 of FIG. 2. Heating elements of the heating lampassembly 16 are grouped into a plurality of zone groups 57, which areconcentric to one another. Each zone group 57 comprises a plurality ofheating elements. One or more pulse groups 53 are also formed in theheating lamp assembly 16.

Each of the pulse groups 53 may comprise one or more heating elements.In one embodiment, the pulse groups 53 may be formed corresponding todifferent radial locations. In the embodiment of FIG. 4, each pulsegroup 53 has a corresponding zone group 57 of the same radial coverage.

In one embodiment, heating elements in the pulse group 53 can be poweredat different phase from the heating elements in the corresponding zonegroup 57, thus, capable of adjusting total radiant energy directed todifferent locations of the radial coverage as the substrate beingprocessed is rotating.

In another embodiment, the heating elements in zone group 57 provideconstant energy level towards an entire radius region of a rotatingsubstrate while the energy level of heating elements in the pulse group53 is pulsed and various towards areas in a radius region of a rotatingsubstrate. But adjusting phase and amplitude of the energy level pulseof the pulse group 53, non-uniformity within a radius region of arotating substrate can be adjusted.

The pulse groups 53 may be formed along the same radius and aligned toform a section of a circle as shown in FIG. 4. The pulse groups 53 mayalso be scattered at different azimuthal angles for more flexiblecontrol.

Referring back to FIG. 2, the power source 55 and the powers sources 54are connected to the controller 52, which may obtain a substratetemperature map in-situ and adjusting the powers sources 55, 56according to the obtained temperature map.

The rapid thermal processing system 10 further comprise a plurality ofthermal probes 24 configured to measure thermal properties of thesubstrate 12 at different radial locations. In one embodiment, theplurality of thermal probes 24 may be a plurality of pyrometersoptically coupled to and disposed in a plurality of apertures 25 formedin the reflector plate 22 to detect a temperature or other thermalproperties of a different radial portion of the substrate 12. Theplurality of apertures 25 may be positioned along one radius as shown inFIG. 2, or at different radius as illustrated in FIG. 4.

The plurality of probes 24 may be used to obtain a temperature map ofthe substrate 12 during processing when sampling at a specific frequencyso that the each probe 24 can measure different locations of thesubstrate 12 at different times at the substrate 12 is rotating. In oneembodiment, the specific frequency may be frequency higher than thefrequency of the substrate rotation by multiple times, so that eachprobe 24 can measure locations evenly distributed along a circle whenthe substrate 12 rotates a whole circle.

FIG. 3 is a schematic top view of a substrate illustrating a method toobtain a temperature map in accordance with one embodiment of thepresent invention. FIG. 5 is an exemplary map of the substrate 12showing locations on the substrate at which temperature data is obtainedwhen the substrate rotates at 4 Hz and the data sampling is at 100 Hz. Atemperature map across the substrate 12 may be obtained.

Referring back to FIG. 2, the thermal processing system 10 may alsocomprise one or more auxiliary heating sources 51 configured to heat thesubstrate 12 during processing. Similar to the pulse groups 53, theauxiliary heating sources 51 are connected to power sources 56 which maybe controlled by adjusting phase and/or amplitude. The auxiliary heatingsource 51 is configured to reduce temperature non-uniformity by imposingmore radiant energy towards locations have lower temperature thanlocation have higher temperatures along a corresponding circular region.

In one embodiment, the auxiliary heating source 51 may be positioned onan opposite side of the heating lamp assembly 16. Each of the auxiliaryheating source 51 and the pulse groups 53 may be used independently orin combination.

In one embodiment, the auxiliary heating source 51 may be a radiationsource which produces no radiation in the bandwidth of the probes 24. Inanother embodiment, the apertures 25 may be shielded from the auxiliaryheating source so that the probes 24 are not affected by the radiationfrom the auxiliary heating source 51. In one embodiment, the auxiliaryheating source 51 may be lasers (such as diode lasers, ruby lasers, CO2lasers, or others) diodes, or line emitters. In one embodiment, theauxiliary heating source 51 may be disposed outside the process chamberand energy from the auxiliary heating source 51 may be directed to theprocessing volume via fibre optics, a light pipe, mirror, or a totalinternal reflecting prism.

FIG. 5 is a schematic flow chart illustrating a method 200 forprocessing a substrate in accordance with one embodiment of the presentinvention. The method 200 is configured to reduce non-uniformitiesincluding radial non-uniformity and non-radial non-uniformity. In oneembodiment, the method 200 may be performed using thermal processingsystems in accordance with embodiments of the present invention.

In box 210, a substrate being processed may be placed in a thermalprocessing chamber, such as the thermal processing system 10 of FIG. 2.In one embodiment, placing the substrate may be performed by a robot onan edge ring.

In box 220, the substrate is rotated within the thermal processingchamber.

In box 230, the substrate is heated by a heating source having one ormore pulse components which can be adjusted by one of phase oramplitude. Exemplary pulse components may be the auxiliary heatingsource 51 and the pulse group 53 of FIG. 2.

In box 240, a temperature of the substrate may be measured using aplurality of sensors, such as the probes 24 of thermal processing system10. As the substrate rotates, a plurality of locations may be measuredby using a specific sampling rate.

In box 250, a temperature map of the substrate may be generated from themeasurement of box 240. In one embodiment, the temperature map maygenerated by software in a controller, such as the controller 52 of FIG.2.

In box 260, characteristics of temperature non-uniformities may bedetermined from the temperature map obtained in box 250. Thecharacteristics may be overall variations, variations among zonescorrespondence to heating zones, variations within a heating zone, suchas angles with high and low temperatures, etc.

In box 270, phase and/or amplitude of the one or more pulse componentsmay be adjusted to reduce temperature variations. Detailed adjustment isdescribed in FIGS. 6A-6E and FIGS. 7A-7E below.

The boxes 230, 240, 250, 260 and 270 may be performed repeatedly untilthe processing is complete.

FIG. 6A is a schematic plot showing an effect of a pulsed laser heatingsource 303 configured to direct radiant energy towards an edge region ofa substrate 304 a. The substrate 304 a is heated by a main heatingsource, such as the heating lamp assembly 16 of FIG. 2, and the pulsedlaser heating source 303. The heating source 303 may be similar to theauxiliary heating source 51 of FIG. 2. Line 301 illustrates a rotationangle of the substrate 304 a relative to the heating source 303. Curve302 a illustrates power supplied to the heating source 303.

The power supplied to the heating source 303 has the same frequency asrotation frequency of the substrate 304 a. Therefore, as the substraterotates, the highest power level is repeatedly directed toward alocation 307 a which is about 90 degrees from the heating source 303before rotating begins. Similarly, the lowest power level is repeatedlydirected at a location 305 a which is 270 degrees from the heatingsource 303.

As a result, the power supplied to the heating source 303 may beadjusted so that its peak strikes when a low temperature location passesthe heating source 303 to provide additional heating to the lowtemperature location.

Even though, the power supplied to the heating source 303 is illustratedas sinusoidal pulses here, any suitable pulses may be applied.

Additionally, the frequency of the power supplied to the heating source303 may be different from the rotation frequency. For example, the powerfrequency may be a fraction of the rotation frequency, such as a half, athird, or a fourth, to achieve desired purposes.

FIG. 6B is a schematic plot showing an effect of the pulsed laserheating source 303 configured to direct radiant energy towards thesubstrate 304 b at when the heating source is powered at a power 302 b.The highest power level is repeatedly directed toward a location 307 bwhich is about 180 degrees from the heating source 303 before rotatingbegins. Similarly, the lowest power level is repeatedly directed at alocation 305 b which is 0 degrees from the heating source 303.

FIG. 6C is a schematic plot showing an effect of the pulsed laserheating source 303 configured to direct radiant energy towards thesubstrate 304 c at when the heating source is powered at a power 302 c.The highest power level is repeatedly directed toward a location 307 cwhich is about 270 degrees from the heating source 303 before rotatingbegins. Similarly, the lowest power level is repeatedly directed at alocation 305 c which is 90 degrees from the heating source 303.

FIG. 6D is a schematic plot showing an effect of the pulsed laserheating source 303 configured to direct radiant energy towards thesubstrate 304 d at when the heating source is powered at a power 302 d.The highest power level is repeatedly directed toward a location 307 dwhich is about 0 degrees from the heating source 303 before rotatingbegins. Similarly, the lowest power level is repeatedly directed at alocation 305 d which is 180 degrees from the heating source 303.

FIGS. 6E-6F schematically illustrate uniformity improvement by adjustingphase and amplitude of a laser heating source. As shown in FIG. 6E,there is a non-radial non-uniformity along an edge of the substratebeing processed without adjusting phase and amplitude of the laserheating source. FIG. 6F schematically shows a temperature map of asubstrate being processed with phase and amplitude adjustment. Thenon-radial non-uniformity is substantially reduced by adjusting phase ofa laser heating source.

FIG. 7A is a schematic top view of a heating lamp assembly 16 a havingthree pulsed zones 51 a, 51 b, 51 c. The pulsed zone 51 a comprises aplurality of heating elements 37 a disposed on a region corresponding toa region outside an edge of the substrate. The heating elements in eachpulsed zone 51 a, 51 b, 51 c may be independently controlled from otherheating elements in the heating lamp assembly 16 a by adjusting phaseand amplitude of the corresponding power source. The pulsed zone 51 bcomprises a plurality of heating elements 37 a disposed in a regioncorresponding to a region near the edge of the substrate. The pulsedzone 51 c comprises a plurality of heating elements disposed in a regioncorresponding to region near a middle section of the substrate. The lampassemblies 16 a may be used in the thermal processing system 10 of FIG.2.

FIG. 7B schematically illustrates effects of a pulsed zone 51 c. Asillustrated in FIG. 7B, adjusting phase of the pulsed zone 51 c canchange temperature variations within the middle region of the substrate.

FIG. 7C schematically illustrates effects of a pulsed zone 51 b. Asillustrated in FIG. 7C, adjusting phase of the pulsed zone 51 b canchange temperature variations within an edge region of the substrate.

FIG. 7D schematically illustrates effects of a pulsed zone 51 a. Asillustrated in FIG. 7D, adjusting phase of the pulsed zone 51 a canchange temperature variations within the bevel edge region of thesubstrate.

FIG. 7E is a schematic plot showing a thermal process that adjusts phaseand amplitude of the pulsed zone 51 a of FIG. 7A. During the process thesubstrate is rotating at a frequency of 4 Hz. The temperature ismeasured at a sampling frequency of 100 Hz with 7 pyrometerscorresponding substrate center to the edge. The thermal processingresembles a spike anneal, which high ramping up and ramping down rates.

Curve 321 reflects rotation cycle of the substrate. Curve 322 reflectsphase and amplitude of power supplied to the pulsed zone 51 a. Curve 323reflects power supplied to heating elements 37 a that are not in thepulsed zones 51 a. Curves 325 indicate temperatures measured bydifferent sensors at different locations. Curve 324 indicatestemperatures of an edge ring supporting the substrate during process.

The amplitude of pulsed power is synchronized with the main power. Thisconfiguration allows the main heating assembly and the pulsed zone touse the same power supply.

FIG. 8 is a schematic sectional side view of a thermal processing system10 _(b) in accordance with one embodiment of the present invention. Thethermal processing system 10 _(b) is similar to the thermal processingsystem 10 except that heating lamp assembly 16 is positioned on a bottomside of the chamber body 35 while the reflector plate 27 is positionedon the top of the chamber.

The arrangement of the thermal processing system 10 _(b) allows thesubstrate to be heated by the heating lamp assembly 16 from the backside. The substrate 12 needs to face up to expose the patterned side toprocessing gases delivered to the processing volume 14. The back sideheating using the thermal processing system 10 _(b) reduced temperaturevariations due to pattern on the device side. FIGS. 10A-10D illustratethe advantage of backside heating.

FIG. 10A is a schematic top view of a test substrate 401 having achecker board pattern. Blocks 402 are covered by 1700 angstroms ofsilicon oxide. Blocks 403 are covered by 570 angstroms ofpolycrystalline silicon.

FIG. 10B is a schematic plot showing a thermal process performed to thetest substrate of FIG. 10A. Line 404 illustrates an average temperatureof the heating elements. Line 405 illustrates an average temperature ofthe substrate. Oxygen is flown during the thermal processing so thatsilicon oxide is formed on backside of the substrate. The thickness ofthe silicon oxide generated on the backside of the substrate reflectsthe temperature of the substrate.

FIG. 10C is a schematic plot of a curve 406 showing thickness ofbackside silicon oxide of the test substrate when the test substrate isheated from the patterned side. The variation of silicon oxide thicknessreflects the variation of substrate temperature. The variation oftemperature is strongly effect by the pattern.

FIG. 10D is a schematic plot of a curve 407 showing silicon oxidethickness across a diameter of the test substrate during thermalprocessing by heating the non-patterned side of the substrate, forexample using a thermal processing system similar to the thermalprocessing system 10 _(b) of FIG. 8.

Temperature control methods in accordance with embodiments of thepresent invention can also be extended to control temperatures of anedge ring configured to support a substrate during processing.

FIG. 9 is a schematic sectional side view of a thermal processingchamber 10 c in accordance with one embodiment of the present invention.The thermal processing chamber 10 c is similar to the thermal processingsystem 10 _(b) except that the thermal processing system 10 c furthercomprises sensors, heating and cooling assemblies for the edge ring 20.

The edge ring 20 may be designed to have thermal properties, such asthermal mass, emissivity and absorptivity, according to the thermalproperties of the substrate 12 being processed to improve substratetemperature profile. The thermal properties of the edge ring 20 may bealtered by choosing different materials, different thicknesses anddifferent coatings.

In one embodiment, an edge ring heating assembly 61 configured primarilyto heat the edge ring 20 may be disposed outside the array of heatingelements 37 of the heating lamp assembly 16. The edge ring heatingassembly 61 is connected to the controller 52 which may adjust a heatingpower 62 of the edge ring heating assembly 61. The edge ring heatingassembly 61 is independently controllable from the array of heatingelements 37, hence controlling the temperature of the edge ring 20independently from the temperature of the substrate 12.

The thermal processing system 10 c further comprises an edge ringthermal probe 63 coupled to and disposed in an aperture 32 on thereflector plate 22 near the edge ring 20. The edge ring thermal probe 63may be a pyrometer configured to measure a temperature or other thermalproperties of the edge ring 20. The edge ring thermal probe 63 isconnected with the controller 52 which is connected to the edge ringheating assembly 61.

The thermal processing system 10 c may further comprises an auxiliaryheating source 67 configured to adjust non-radial temperature variationsto the edge ring 20.

A gas jet 65 may be disposed near the edge ring 20 for cooling the edgering 20. In one embodiment, the gas jet 65 may share the same purge gassource 66. The gas jet 65 may be directed to the edge ring 20 andejecting a cooling gas, such as helium, to cool the edge ring 20. Thegas jet 65 may be connected to the gas source 66 through a valve 68which may be controlled by the controller 52. The controller 52,therefore, may include the cooling effect of the gas jet 66 in theclosed looped temperature control of the edge ring 20.

The measurement from the sensor 63 may be to generate a temperature mapfor the edge ring 20 in a similar way as using the probes 24 to generatea temperature map for the substrate 12. Methods, such as method 200, maybe used to adjust phase and/or amplitude of the edge ring heatingassembly 61, and/or the auxiliary heating source 67 to reducenon-uniformity in the edge ring 20. Additionally, the flow rate ofcooling gas from the gas jet 65 may be adjusted during according to therotation angle of the edge ring 20 to allow adjustable cooling.

Even though, processing of semiconductor substrates are described inthis application, embodiments of the present invention may be used inany suitable situation to control temperature of objects being heated.Embodiments of the present invention may also be applied to a coolingprocess in controlling cooling apparatus.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

The invention claimed is:
 1. An apparatus for processing a substrate,comprising: a chamber body defining a processing volume; a rotatablesubstrate support disposed in the processing volume, wherein thesubstrate support comprises an edge ring; a temperature sensor assemblypositioned below the edge ring; a first heating source positioned abovethe edge ring and operable to provide non-pulsed energy towards theprocessing volume in a plurality of concentric heating regions; a secondheating source positioned above the edge ring and operable to providepulsed energy towards the processing volume in a pulse heating regioncorresponding to a radial location of at least one of the concentricheating regions; and a sensor disposed within the processing volume andoriented towards the substrate support, the sensor having a samplingfrequency equal to or greater than a rotation frequency of the substratesupport.
 2. The apparatus of claim 1, wherein the second heating sourcecomprises laser diodes.
 3. The apparatus of claim 1, wherein at leastone of frequency, phase, and amplitude of the second heating source isadjustable.
 4. The apparatus of claim 1, wherein the edge ring isrotatable.
 5. The apparatus of claim 1, wherein the second heatingsource comprises a plurality of heating elements grouped in a pluralityof azimuthally controlled zone groups.
 6. The apparatus of claim 5,wherein the plurality of azimuthally controlled zone groups are disposedwithin a plurality of concentric heating zones.
 7. An apparatus forprocessing a substrate, comprising: a chamber body defining a processingvolume; a rotatable substrate support disposed in the processing volume,wherein the substrate support comprises an edge ring disposed at aperipheral region of the processing volume; a sensor assembly positionedto measure temperature at one or more locations within the processingvolume, the sensor assembly having a sampling frequency equal to orgreater than a rotation frequency of the substrate support; a firstheating source to provide non-pulsed energy towards the processingvolume in a plurality of concentric heating regions, wherein the firstheating source comprises a plurality of heating elements grouped in aplurality of heating zone groups; and a second heating source to providepulsed energy towards the processing volume in a pulse heating regioncorresponding to a portion of at least one of the concentric heatingregions, the second heating source having a pulse frequencysubstantially equal to or less than a rotation frequency of thesubstrate support.
 8. The apparatus of claim 7, wherein the secondheating element comprises laser diodes or line emitters.
 9. Theapparatus of claim 7, wherein the first heating source and the secondheating source are positioned on opposite sides of the substratesupport.
 10. The apparatus of claim 7, wherein the second heating sourcecomprises laser diodes.
 11. The apparatus of claim 7, wherein at leastone of frequency, phase, and amplitude of the second heating source isadjustable.
 12. The apparatus of claim 7, further comprising anauxiliary heating source positioned below the edge ring.
 13. Theapparatus of claim 7, wherein each of the plurality of heating zonegroups corresponds to a concentric heating region.
 14. The apparatus ofclaim 7, wherein the second heating source comprises a plurality ofheating elements grouped in a plurality of pulsed zone groups.
 15. Theapparatus of claim 14, wherein at least one of the plurality of pulsedzone groups corresponds to the pulse heating region.
 16. An apparatusfor processing a substrate, comprising: a chamber body defining aprocessing volume; a rotatable substrate support disposed in theprocessing volume, wherein the substrate support comprises an edge ringdisposed at a peripheral region of the processing volume; a plurality ofsensors positioned to measure temperature at one or more locationswithin the processing volume, the plurality of sensors having a samplingfrequency equal to or greater than a rotation frequency of the substratesupport; a first heating source to provide non-pulsed energy towards theprocessing volume in a plurality of concentric heating regions, whereinthe first heating source comprises a plurality of heating elementsgrouped in a plurality of heating zone groups corresponding a pluralityof heating regions in the processing volume; a second heating source toprovide pulsed energy towards the processing volume in a plurality ofpulse heating regions, each pulse heating region corresponding to aportion of one of the concentric heating regions, the second heatingsource having a pulse frequency substantially equal to or less than arotation frequency of the substrate support and powered at a phasedifferent from the first heating source.
 17. The apparatus of claim 15,wherein at least one of frequency, phase, and amplitude of the secondheating source is adjustable.
 18. The apparatus of claim 15, wherein thesecond heating element comprises laser diodes or line emitters.
 19. Theapparatus of claim 15, wherein the first heating source and the secondheating source are positioned on opposite sides of the substratesupport.
 20. The apparatus of claim 15, further comprising an auxiliaryheating source positioned below the edge ring.